Epi Service

AlN Template
Image Series Name Parts Number Size(mm3) Spec-sheet
Epi Wafer AlN 2" (50.8㎜)
Characteristics (at 25℃) Thickness (Included substrate)
430㎛±15㎛

Thickness (Included substrate)
430㎛±15㎛

Structure
AlN / Sapphire substrate
Parameter Typ. Test Conditions
Crack Free AlN Surface Area Diameter >44mm  
Thickness Thickness <3㎛  
XRD (002) <250 arcsec Panalytical
HRXRD
(102) <400 arcsec
RMS 5 ㎛ * 5 ㎛ 1 nm  
Blue LED
Image Series Name Parts Number Size(mm3) Spec-sheet
Epi Wafer Blue LED 2" (50.8㎜)
  Feature
Blue LED Epi. Wafer
Single side polished (Growth surface)

Thickness (Included substrate)
430㎛±15㎛

Structure
p-GaN / MQWs /
n-GaN / u-GaN / Sapphire substrate

Nomalized Single Spectrum
300 ~ 700nm
Characteristics (at 25℃)
Parameter Typ. Test Conditions
PL measurement Peak wavelength 450㎚±20㎚ Accent RPM2000
- Laser : 266nm Nd-YG
- 3mm Edge Exclude
Uniformity STD <3%
FWHM <40㎚
FWHM STD <20%
Thickness Thickness 4.8㎛+/-10%
Thickness STD <10%
XRD (002) N/A Panalytical
HRXRD
(102) N/A
Hall Carrier Concentration N/A Accent
HL5500
Mobility N/A
Doping material Si used -
 
Green LED
Image Series Name Parts Number Size(mm3) Spec-sheet
Epi Wafer Green LED 2" (50.8㎜)
  Feature
Green LED Epi. Wafer
Single side polished (Growth surface)

Thickness (Included substrate)
430㎛±15㎛

Structure
p-GaN / MQWs /
n-GaN / u-GaN / Sapphire substrate

Nomalized Single Spectrum
300 ~ 700nm
Characteristics (at 25℃)
Parameter Typ. Test Conditions
PL measurement Peak wavelength 510㎚±10㎚ Accent RPM2000
- Laser : 266nm Nd-YG
- 3mm Edge Exclude
Uniformity STD <3%
FWHM <100㎚
FWHM STD <20%
Thickness Thickness 4.8㎛+/-10%
Thickness STD <10%
XRD (002) N/A Panalytical
HRXRD
(102) N/A
Hall Carrier Concentration N/A Accent
HL5500
Mobility N/A
Doping material Si used -
 
U-GaN
Image Series Name Parts Number Size(mm3) Spec-sheet
Epi Wafer Undoped GaN 2" (50.8㎜)
  Feature
Undoped GaN Epi. Wafer
Single side polished (Growth surface)

Thickness (Included substrate)
430㎛±15㎛

Structure
u-GaN / Sapphire substrate

Nomalized Single Spectrum
300 ~ 700nm
Characteristics (at 25℃)
Parameter Typ. Test Conditions
PL measurement Peak wavelength 362nm±2nm Accent RPM2000
- Laser : 266nm Nd-YG
- 3mm Edge Exclude
Uniformity STD <3%
FWHM <10㎚
FWHM STD <3%
Thickness Thickness 2㎛+/-10%
Thickness STD <10%
XRD (002) <350 arcsec Panalytical
HRXRD
(102) <450 arcsec
Hall Carrier Concentration < -1×1017 /㎝ Accent
HL5500
Mobility >200 ㎠/V·sec
Doping material Si N/A -
 
P-GaN
Image Series Name Parts Number Size(mm3) Spec-sheet
Epi Wafer n-Type GaN 2" (50.8㎜)
  Feature
n-Type GaN Epi. Wafer
Single side polished (Growth surface)

Thickness (Included substrate)
430㎛±15㎛

Structure
n-GaN / u-GaN / Sapphire substrate

Nomalized Single Spectrum
300 ~ 700nm
Characteristics (at 25℃)
Parameter Typ. Test Conditions
PL measurement Peak wavelength 362nm±2nm Accent RPM2000
- Laser : 266nm Nd-YG
- 3mm Edge Exclude
Uniformity STD <3%
FWHM <10㎚
FWHM STD <3%
Thickness Thickness 4㎛+/-10%
Thickness STD <10%
XRD (002) <400 arcsec Panalytical
HRXRD
(102) <500 arcsec
Hall Carrier Concentration < -1×1018 /㎝ Accent
HL5500
Mobility >200 ㎠/V·sec
Doping material Si used -
Mg N/A
 
P-GaN
Image Series Name Parts Number Size(mm3) Spec-sheet
Epi Wafer p-Type GaN 2" (50.8㎜)
  Feature
p-Type GaN Epi. Wafer
Single side polished (Growth surface)

Thickness (Included substrate)
430㎛±15㎛

Structure
p-GaN / u-GaN / Sapphire substrate

Nomalized Single Spectrum
300 ~ 700nm
Characteristics (at 25℃)
Parameter Typ. Test Conditions
ment Peak wavelength 362nm±2nm Accent RPM2000
- Laser : 266nm Nd-YG
- 3mm Edge Exclude
Uniformity STD <3%
FWHM <10㎚
FWHM STD <3%
Thickness Thickness 0.8㎛+/-10%
Thickness STD <10%
XRD (002) N/A Panalytical
HRXRD
(102) N/A
Hall Carrier Concentration N/A Accent
HL5500
Mobility N/A
Doping material Si N/A -
Mg used

 

Address:
İbrahim Karaoğlanoğlu Cad. No: 101 34418, Seyrantepe / İstanbul Turkey
Phone: +90 212 284 44 53
Fax: +90 212 278 39 64
Email: info@lighttradecentre.com