Green LED

Image

Series Name

Parts Number

Size(mm3)

Spec-sheet

Epi Wafer

Green LED

2" (50.8㎜)

Feature
Green LED Epi. Wafer
Single side polished (Growth surface)

Thickness (Included substrate)
430㎛±15㎛

Structure
p-GaN / MQWs /
n-GaN / u-GaN / Sapphire substrate

Nomalized Single Spectrum
300 ~ 700nm

Characteristics (at 25℃)
Parameter		Typ.	Test Conditions
PL measurement	Peak wavelength	510㎚±10㎚	Accent RPM2000 - Laser : 266nm Nd-YG - 3mm Edge Exclude
	Uniformity STD	<3%
	FWHM	<100㎚
	FWHM STD	<20%
Thickness	Thickness	4.8㎛+/-10%
	Thickness STD	<10%
XRD	(002)	N/A	Panalytical HRXRD
	(102)	N/A
Hall	Carrier Concentration	N/A	Accent HL5500
	Mobility	N/A
Doping material	Si	used	-