U-GaN

Image

Series Name

Parts Number

Size(mm3)

Spec-sheet

Epi Wafer

Undoped GaN

2" (50.8㎜)

Feature
Undoped GaN Epi. Wafer
Single side polished (Growth surface)

Thickness (Included substrate)
430㎛±15㎛

Structure
u-GaN / Sapphire substrate

Nomalized Single Spectrum
300 ~ 700nm

Characteristics (at 25℃)
Parameter		Typ.	Test Conditions
PL measurement	Peak wavelength	362nm±2nm	Accent RPM2000 - Laser : 266nm Nd-YG - 3mm Edge Exclude
	Uniformity STD	<3%
	FWHM	<10㎚
	FWHM STD	<3%
Thickness	Thickness	2㎛+/-10%
	Thickness STD	<10%
XRD	(002)	<350 arcsec	Panalytical HRXRD
	(102)	<450 arcsec
Hall	Carrier Concentration	< -1×1017 /㎝	Accent HL5500
	Mobility	>200 ㎠/V·sec
Doping material	Si	N/A	-