P-GaN

Image

Series Name

Parts Number

Size(mm3)

Spec-sheet

Epi Wafer

p-Type GaN

2" (50.8㎜)

Feature
p-Type GaN Epi. Wafer
Single side polished (Growth surface)

Thickness (Included substrate)
430㎛±15㎛

Structure
p-GaN / u-GaN / Sapphire substrate

Nomalized Single Spectrum
300 ~ 700nm

Characteristics (at 25℃)
Parameter		Typ.	Test Conditions
ment	Peak wavelength	362nm±2nm	Accent RPM2000 - Laser : 266nm Nd-YG - 3mm Edge Exclude
	Uniformity STD	<3%
	FWHM	<10㎚
	FWHM STD	<3%
Thickness	Thickness	0.8㎛+/-10%
Thickness	Thickness STD	<10%
XRD	(002)	N/A	Panalytical HRXRD
XRD	(102)	N/A	Panalytical HRXRD
Hall	Carrier Concentration	N/A	Accent HL5500
Hall	Mobility	N/A	Accent HL5500
Doping material	Si	N/A	-
Doping material	Mg	used	-