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AlN Template
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AlN Template
Image
Series Name
Parts Number
Size(mm3)
Spec-sheet
Epi Wafer
AlN
2" (50.8㎜)
Characteristics (at 25℃)
Thickness (Included substrate)
430㎛±15㎛
Thickness (Included substrate)
430㎛±15㎛
Structure
AlN / Sapphire substrate
Parameter
Typ.
Test Conditions
Crack Free AlN Surface Area
Diameter
>44mm
Thickness
Thickness
<3㎛
XRD
(002)
<250 arcsec
Panalytical
HRXRD
(102)
<400 arcsec
RMS
5 ㎛ * 5 ㎛
1 nm
Blue LED
Image
Series Name
Parts Number
Size(mm3)
Spec-sheet
Epi Wafer
Blue LED
2" (50.8㎜)
Feature
Blue LED Epi. Wafer
Single side polished (Growth surface)
Thickness (Included substrate)
430㎛±15㎛
Structure
p-GaN / MQWs /
n-GaN / u-GaN / Sapphire substrate
Nomalized Single Spectrum
300 ~ 700nm
Characteristics (at 25℃)
Parameter
Typ.
Test Conditions
PL measurement
Peak wavelength
450㎚±20㎚
Accent RPM2000
- Laser : 266nm Nd-YG
- 3mm Edge Exclude
Uniformity STD
<3%
FWHM
<40㎚
FWHM STD
<20%
Thickness
Thickness
4.8㎛+/-10%
Thickness STD
<10%
XRD
(002)
N/A
Panalytical
HRXRD
(102)
N/A
Hall
Carrier Concentration
N/A
Accent
HL5500
Mobility
N/A
Doping material
Si
used
-
Green LED
Image
Series Name
Parts Number
Size(mm3)
Spec-sheet
Epi Wafer
Green LED
2" (50.8㎜)
Feature
Green LED Epi. Wafer
Single side polished (Growth surface)
Thickness (Included substrate)
430㎛±15㎛
Structure
p-GaN / MQWs /
n-GaN / u-GaN / Sapphire substrate
Nomalized Single Spectrum
300 ~ 700nm
Characteristics (at 25℃)
Parameter
Typ.
Test Conditions
PL measurement
Peak wavelength
510㎚±10㎚
Accent RPM2000
- Laser : 266nm Nd-YG
- 3mm Edge Exclude
Uniformity STD
<3%
FWHM
<100㎚
FWHM STD
<20%
Thickness
Thickness
4.8㎛+/-10%
Thickness STD
<10%
XRD
(002)
N/A
Panalytical
HRXRD
(102)
N/A
Hall
Carrier Concentration
N/A
Accent
HL5500
Mobility
N/A
Doping material
Si
used
-
U-GaN
Image
Series Name
Parts Number
Size(mm3)
Spec-sheet
Epi Wafer
Undoped GaN
2" (50.8㎜)
Feature
Undoped GaN Epi. Wafer
Single side polished (Growth surface)
Thickness (Included substrate)
430㎛±15㎛
Structure
u-GaN /
Sapphire substrate
Nomalized Single Spectrum
300 ~ 700nm
Characteristics (at 25℃)
Parameter
Typ.
Test Conditions
PL measurement
Peak wavelength
362nm±2nm
Accent RPM2000
- Laser : 266nm Nd-YG
- 3mm Edge Exclude
Uniformity STD
<3%
FWHM
<10㎚
FWHM STD
<3%
Thickness
Thickness
2㎛+/-10%
Thickness STD
<10%
XRD
(002)
<350 arcsec
Panalytical
HRXRD
(102)
<450 arcsec
Hall
Carrier Concentration
< -1×1017 /㎝
Accent
HL5500
Mobility
>200 ㎠/V·sec
Doping material
Si
N/A
-
P-GaN
Image
Series Name
Parts Number
Size(mm3)
Spec-sheet
Epi Wafer
n-Type GaN
2" (50.8㎜)
Feature
n-Type GaN Epi. Wafer
Single side polished (Growth surface)
Thickness (Included substrate)
430㎛±15㎛
Structure
n-GaN /
u-GaN / Sapphire substrate
Nomalized Single Spectrum
300 ~ 700nm
Characteristics (at 25℃)
Parameter
Typ.
Test Conditions
PL measurement
Peak wavelength
362nm±2nm
Accent RPM2000
- Laser : 266nm Nd-YG
- 3mm Edge Exclude
Uniformity STD
<3%
FWHM
<10㎚
FWHM STD
<3%
Thickness
Thickness
4㎛+/-10%
Thickness STD
<10%
XRD
(002)
<400 arcsec
Panalytical
HRXRD
(102)
<500 arcsec
Hall
Carrier Concentration
< -1×1018 /㎝
Accent
HL5500
Mobility
>200 ㎠/V·sec
Doping material
Si
used
-
Mg
N/A
P-GaN
Image
Series Name
Parts Number
Size(mm3)
Spec-sheet
Epi Wafer
p-Type GaN
2" (50.8㎜)
Feature
p-Type GaN Epi. Wafer
Single side polished (Growth surface)
Thickness (Included substrate)
430㎛±15㎛
Structure
p-GaN /
u-GaN / Sapphire substrate
Nomalized Single Spectrum
300 ~ 700nm
Characteristics (at 25℃)
Parameter
Typ.
Test Conditions
ment
Peak wavelength
362nm±2nm
Accent RPM2000
- Laser : 266nm Nd-YG
- 3mm Edge Exclude
Uniformity STD
<3%
FWHM
<10㎚
FWHM STD
<3%
Thickness
Thickness
0.8㎛+/-10%
Thickness STD
<10%
XRD
(002)
N/A
Panalytical
HRXRD
(102)
N/A
Hall
Carrier Concentration
N/A
Accent
HL5500
Mobility
N/A
Doping material
Si
N/A
-
Mg
used
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