| AlN Template | ||||
|---|---|---|---|---|
| Image | Series Name | Parts Number | Size(mm3) | Spec-sheet |
 |
Epi Wafer | AlN | 2" (50.8㎜) |  |
| Characteristics (at 25℃) | Thickness (Included substrate) 430㎛±15㎛ Thickness (Included substrate) 430㎛±15㎛ Structure AlN / Sapphire substrate |
|||
| Parameter | Typ. | Test Conditions | ||
| Crack Free AlN Surface Area | Diameter | >44mm | ||
| Thickness | Thickness | <3㎛ | ||
| XRD | (002) | <250 arcsec | Panalytical HRXRD |
|
| (102) | <400 arcsec | |||
| RMS | 5 ㎛ * 5 ㎛ | 1 nm | ||
| Blue LED | ||||
|---|---|---|---|---|
| Image | Series Name | Parts Number | Size(mm3) | Spec-sheet |
 |
Epi Wafer | Blue LED | 2" (50.8㎜) | |
| Feature Blue LED Epi. Wafer Single side polished (Growth surface) Thickness (Included substrate) 430㎛±15㎛ Structure p-GaN / MQWs / n-GaN / u-GaN / Sapphire substrate Nomalized Single Spectrum 300 ~ 700nm |
||||
| Characteristics (at 25℃) | ||||
| Parameter | Typ. | Test Conditions | ||
| PL measurement | Peak wavelength | 450㎚±20㎚ | Accent RPM2000 - Laser : 266nm Nd-YG - 3mm Edge Exclude |
|
| Uniformity STD | <3% | |||
| FWHM | <40㎚ | |||
| FWHM STD | <20% | |||
| Thickness | Thickness | 4.8㎛+/-10% | ||
| Thickness STD | <10% | |||
| XRD | (002) | N/A | Panalytical HRXRD |
|
| (102) | N/A | |||
| Hall | Carrier Concentration | N/A | Accent HL5500 |
|
| Mobility | N/A | |||
| Doping material | Si | used | - | |
| Green LED | ||||
|---|---|---|---|---|
| Image | Series Name | Parts Number | Size(mm3) | Spec-sheet |
|
Epi Wafer | Green LED | 2" (50.8㎜) | |
| Feature Green LED Epi. Wafer Single side polished (Growth surface) Thickness (Included substrate) 430㎛±15㎛ Structure p-GaN / MQWs / n-GaN / u-GaN / Sapphire substrate Nomalized Single Spectrum 300 ~ 700nm |
||||
| Characteristics (at 25℃) | ||||
| Parameter | Typ. | Test Conditions | ||
| PL measurement | Peak wavelength | 510㎚±10㎚ | Accent RPM2000 - Laser : 266nm Nd-YG - 3mm Edge Exclude |
|
| Uniformity STD | <3% | |||
| FWHM | <100㎚ | |||
| FWHM STD | <20% | |||
| Thickness | Thickness | 4.8㎛+/-10% | ||
| Thickness STD | <10% | |||
| XRD | (002) | N/A | Panalytical HRXRD |
|
| (102) | N/A | |||
| Hall | Carrier Concentration | N/A | Accent HL5500 |
|
| Mobility | N/A | |||
| Doping material | Si | used | - | |
| U-GaN | ||||
|---|---|---|---|---|
| Image | Series Name | Parts Number | Size(mm3) | Spec-sheet |
 |
Epi Wafer | Undoped GaN | 2" (50.8㎜) | |
| Feature Undoped GaN Epi. Wafer Single side polished (Growth surface) Thickness (Included substrate) 430㎛±15㎛ Structure u-GaN / Sapphire substrate Nomalized Single Spectrum 300 ~ 700nm |
||||
| Characteristics (at 25℃) | ||||
| Parameter | Typ. | Test Conditions | ||
| PL measurement | Peak wavelength | 362nm±2nm | Accent RPM2000 - Laser : 266nm Nd-YG - 3mm Edge Exclude |
|
| Uniformity STD | <3% | |||
| FWHM | <10㎚ | |||
| FWHM STD | <3% | |||
| Thickness | Thickness | 2㎛+/-10% | ||
| Thickness STD | <10% | |||
| XRD | (002) | <350 arcsec | Panalytical HRXRD |
|
| (102) | <450 arcsec | |||
| Hall | Carrier Concentration | < -1×1017 /㎝ | Accent HL5500 |
|
| Mobility | >200 ㎠/V·sec | |||
| Doping material | Si | N/A | - | |
| P-GaN | ||||
|---|---|---|---|---|
| Image | Series Name | Parts Number | Size(mm3) | Spec-sheet |
 |
Epi Wafer | n-Type GaN | 2" (50.8㎜) | |
| Feature n-Type GaN Epi. Wafer Single side polished (Growth surface) Thickness (Included substrate) 430㎛±15㎛ Structure n-GaN / u-GaN / Sapphire substrate Nomalized Single Spectrum 300 ~ 700nm |
||||
| Characteristics (at 25℃) | ||||
| Parameter | Typ. | Test Conditions | ||
| PL measurement | Peak wavelength | 362nm±2nm | Accent RPM2000 - Laser : 266nm Nd-YG - 3mm Edge Exclude |
|
| Uniformity STD | <3% | |||
| FWHM | <10㎚ | |||
| FWHM STD | <3% | |||
| Thickness | Thickness | 4㎛+/-10% | ||
| Thickness STD | <10% | |||
| XRD | (002) | <400 arcsec | Panalytical HRXRD |
|
| (102) | <500 arcsec | |||
| Hall | Carrier Concentration | < -1×1018 /㎝ | Accent HL5500 |
|
| Mobility | >200 ㎠/V·sec | |||
| Doping material | Si | used | - | |
| Mg | N/A | |||
| P-GaN | ||||
|---|---|---|---|---|
| Image | Series Name | Parts Number | Size(mm3) | Spec-sheet |
 |
Epi Wafer | p-Type GaN | 2" (50.8㎜) | |
| Feature p-Type GaN Epi. Wafer Single side polished (Growth surface) Thickness (Included substrate) 430㎛±15㎛ Structure p-GaN / u-GaN / Sapphire substrate Nomalized Single Spectrum 300 ~ 700nm |
||||
| Characteristics (at 25℃) | ||||
| Parameter | Typ. | Test Conditions | ||
| ment | Peak wavelength | 362nm±2nm | Accent RPM2000 - Laser : 266nm Nd-YG - 3mm Edge Exclude |
|
| Uniformity STD | <3% | |||
| FWHM | <10㎚ | |||
| FWHM STD | <3% | |||
| Thickness | Thickness | 0.8㎛+/-10% | ||
| Thickness STD | <10% | |||
| XRD | (002) | N/A | Panalytical HRXRD |
|
| (102) | N/A | |||
| Hall | Carrier Concentration | N/A | Accent HL5500 |
|
| Mobility | N/A | |||
| Doping material | Si | N/A | - | |
| Mg | used | |||
Adres:
Yeşilce Mah. Çelik Cad. No:31-33 Kat:4 Daire:5, Kağıthane, 34418, İstanbul Telefon: +90 212 284 44 53
Fax: +90 212 278 39 64
Email: info@lighttradecentre.com
Yeşilce Mah. Çelik Cad. No:31-33 Kat:4 Daire:5, Kağıthane, 34418, İstanbul Telefon: +90 212 284 44 53
Fax: +90 212 278 39 64
Email: info@lighttradecentre.com
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